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NUS6160MN
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted, all parameters apply to both FET SW and
FET REG )
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
V (Br)DSS
V (Br)DSS/ T J
V GS = 0 V, I D = ? 250 m A
? 20
? 15
V
mV/ ° C
Temperature Coefficient
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V
V DS = ? 16 V
T J = 25 ° C
T J = 85 ° C
? 1.0
? 5.0
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = " 8.0 V
" 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
V GS(TH)
V GS(TH)/ T J
V GS = V DS, I D = ? 250 m A
? 0.45
2.7
? 1.5
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(ON)
V GS = ? 4.5 V, I D = ? 1.0 A
64
80
m W
V GS = ? 4.5 V, I D = ? 0.6 A
62
80
Forward Transconductance
g FS
V DS = ? 10 V, I D = ? 2.9 A
7.0
S
CHARGES, CAPACITANCES, AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C ISS
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = ? 16 V
750
100
45
pF
Total Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TOT)
Q GS
Q GD
V GS = ? 4.5 V, V DS = ? 16 V,
I D = ? 2.6 A
7.6
1.3
2.6
8.6
nC
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(ON)
5.5
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = ? 4.5 V, V DD = ? 16 V,
I D = ? 2.6 A, R G = 2.0 W
12
32
23
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
V SD
t RR
ta
tb
Q RR
V GS = 0 V, I S = ? 1.1 A
V GS = 0 V, dI S /dt = 100 A/ m s,
I S = 1.0 A
? 0.8
20
15
5
0.01
? 1.2
V
ns
m C
2. Pulse test: pulse width ≤ 300 m s, duty cycle ≤ 2%
3. Switching characteristics are independent of operating junction temperatures
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